BUV10N GP BJT

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  • 2963 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 125V 25A 3-Pin(2+Tab) TO-3

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Features Values Unit
Category Bipolar Power
Configuration Single
Maximum Collector Emitter Voltage 125 V
Maximum DC Collector Current 25 A
Maximum Power Dissipation 175000 mW
Maximum Transition Frequency 10(Typ) MHz
Type NPN