BUV28 GP BJT
Datasheet: View
Stock
- 6829 NEW JERSEY SEMICONDUCTOR
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Maximum Collector Base Voltage | 400 | V |
| Maximum Collector Emitter Saturation Voltage | 0.7@0.3A@3A|1.5@0.6A@6A | V |
| Maximum Collector Emitter Voltage | 200 | V |
| Maximum DC Collector Current | 10 | A |
| Maximum Emitter Base Voltage | 7 | V |
| Maximum Operating Temperature | 175 | °C |
| Maximum Power Dissipation | 85000 | mW |
| Type | NPN |