BUV47 GP BJT
Datasheet: View
Stock
- 2151 NEW JERSEY SEMICONDUCTOR
- 10 ST MICRO
- 3 WORLD WIDE
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Maximum Collector Emitter Saturation Voltage | 1.5@1.2A@6A|3@3A@9A | V |
| Maximum Collector Emitter Voltage | 400 | V |
| Maximum DC Collector Current | 9 | A |
| Maximum Emitter Base Voltage | 7 | V |
| Maximum Operating Temperature | 150 | °C |
| Maximum Power Dissipation | 100000 | mW |
| Type | NPN |