BUV47A GP BJT
Datasheet: View
Stock
- 5825 NEW JERSEY SEMICONDUCTOR
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Maximum Collector Emitter Saturation Voltage | 1.5@1A@5A|3@2.5A@8A | V |
| Maximum Collector Emitter Voltage | 450 | V |
| Maximum DC Collector Current | 9 | A |
| Maximum Emitter Base Voltage | 7 | V |
| Maximum Operating Temperature | 150 | °C |
| Maximum Power Dissipation | 100000 | mW |
| Type | NPN |