BUV47FI GP BJT

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  • 1325 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 400V 9A 3-Pin(3+Tab) ISOWATT218

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Features Values Unit
Category Bipolar Power
Configuration Single
Maximum Collector Emitter Saturation Voltage 1.5@1.2A@6A 3@3A@9A
Maximum Collector Emitter Voltage 400 V
Maximum DC Collector Current 9 A
Maximum Emitter Base Voltage 7 V
Maximum Operating Temperature 150 °C
Maximum Power Dissipation 55000 mW
Type NPN