BUV48AFI GP BJT

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  • 1745 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 450V 15A 3-Pin(3+Tab) ISOWATT218

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Emitter Saturation Voltage 1.5@1.6A@8A 5@2.4A@12A
Maximum Collector Emitter Voltage 450 V
Maximum DC Collector Current 15 A
Maximum Emitter Base Voltage 7 V
Maximum Operating Temperature 150 °C
Maximum Power Dissipation 55000 mW
Type NPN