BUV48B GP BJT
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- 2477 NEW JERSEY SEMICONDUCTOR
- 1 WORLD WIDE
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Base Voltage | 1000 | V |
| Maximum Collector Emitter Saturation Voltage | 1.5@1.6A@8A|5@2.4A@12A | V |
| Maximum Collector Emitter Voltage | 450 | V |
| Maximum DC Collector Current | 15 | A |
| Maximum Emitter Base Voltage | 7 | V |
| Maximum Operating Temperature | 150 | °C |
| Maximum Power Dissipation | 125000 | mW |
| Type | NPN |