BUV50 GP BJT
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- 2133 NEW JERSEY SEMICONDUCTOR
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Emitter Saturation Voltage | 0.8@0.5A@10A | 0.9@2A@20A |
| Maximum Collector Emitter Voltage | 125 | V |
| Maximum DC Collector Current | 25 | A |
| Maximum Emitter Base Voltage | 7 | V |
| Maximum Operating Temperature | 200 | °C |
| Maximum Power Dissipation | 2000 | mW |
| Type | NPN |