BUV60 GP BJT
Datasheet: View
Stock
- 39 NEW JERSEY SEMICONDUCTOR
Trans GP BJT NPN 125V 50A 3-Pin(2+Tab) TO-3
Request For Quote| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Base Voltage | 260 | V |
| Maximum Collector Emitter Saturation Voltage | 0.9@1.25A@25A | 0.9@5A@50A |
| Maximum Collector Emitter Voltage | 125 | V |
| Maximum DC Collector Current | 50 | A |
| Maximum Emitter Base Voltage | 7 | V |
| Maximum Operating Temperature | 200 | °C |
| Maximum Power Dissipation | 250000 | mW |
| Maximum Transition Frequency | 8(Min) | MHz |
| Type | NPN |