BUV62 GP BJT
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- 1 NEW JERSEY SEMICONDUCTOR
Trans GP BJT NPN 250V 40A 3-Pin(2+Tab) TO-3
Request For Quote| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Maximum Collector Emitter Saturation Voltage | 0.9@0.53A@8A | 0.9@1.6A@16A |
| Maximum Collector Emitter Voltage | 250 | V |
| Maximum DC Collector Current | 40 | A |
| Maximum Emitter Base Voltage | 7 | V |
| Maximum Operating Temperature | 200 | °C |
| Maximum Power Dissipation | 250000 | mW |
| Type | NPN |