BUW32 GP BJT

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  • 6019 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 400V 10A 3-Pin(2+Tab) TO-3 Sleeve

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Features Values Unit
Category Bipolar Power
Configuration Single
Maximum Collector Base Voltage 500 V
Maximum Collector Emitter Saturation Voltage 1.5@5A V
Maximum Collector Emitter Voltage 400 V
Maximum DC Collector Current 10 A
Maximum Power Dissipation 125000 mW
Type NPN