BUW42A GP BJT

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  • 5174 NEW JERSEY SEMICONDUCTOR
  • 1 ST MICRO

Trans GP BJT PNP 400V 15A

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Emitter Saturation Voltage 1.5@3A@10A V
Maximum Collector Emitter Voltage 400 V
Maximum DC Collector Current 15 A
Maximum Emitter Base Voltage 7 V
Maximum Operating Temperature 175 ᄀC
Maximum Power Dissipation 150000 mW
Type PNP