BUW48C GP BJT

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  • 82 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 60V 30A 3-Pin(3+Tab) TO-218

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Base Voltage 120 V
Maximum Collector Emitter Saturation Voltage 0.6@2A@20A|1.4@4A@40A V
Maximum Collector Emitter Voltage 60 V
Maximum DC Collector Current 30 A
Maximum Emitter Base Voltage 7 V
Maximum Operating Temperature 175 °C
Maximum Power Dissipation 150000 mW
Maximum Transition Frequency 8(Typ) MHz
Type NPN