BUX10 GP BJT
Datasheet: View
Stock
- 5 MOTOROLA
- 3166 NEW JERSEY SEMICONDUCTOR
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Base Voltage | 160 | V |
| Maximum Collector Emitter Saturation Voltage | 0.6@1A@10A|1.2@2A@20A | V |
| Maximum Collector Emitter Voltage | 125 | V |
| Maximum DC Collector Current | 25 | A |
| Maximum Emitter Base Voltage | 7 | V |
| Maximum Operating Temperature | 200 | °C |
| Maximum Power Dissipation | 150000 | mW |
| Maximum Transition Frequency | 8(Min) | MHz |
| Type | NPN |