BUX11N GP BJT

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  • 87 HARRIS
  • 1581 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 160V 20A 3-Pin(2+Tab) TO-3

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Features Values Unit
Category Bipolar Power
Configuration Single
Maximum Collector Emitter Voltage 160 V
Maximum DC Collector Current 20 A
Maximum Power Dissipation 150000 mW
Maximum Transition Frequency 8(Typ) MHz
Type NPN