BUX348 GP BJT

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  • 302 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 450V 45A 3-Pin(2+Tab) TO-3 Tube

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Features Values Unit
Category Bipolar Power
Configuration Single
Maximum Collector Base Voltage 850 V
Maximum Collector Emitter Saturation Voltage \0.9@6A@30A 2@6A@30A\
Maximum Collector Emitter Voltage 450 V
Maximum DC Collector Current 45 A
Maximum Emitter Base Voltage 7 V
Maximum Operating Temperature 200 °C
Maximum Power Dissipation 300000 mW
Type NPN