BUX37 GP BJT

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  • 2059 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 400V 15A 3-Pin(2+Tab) TO-3

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Emitter Saturation Voltage 2@0.15A@10A V
Maximum Collector Emitter Voltage 400 V
Maximum DC Collector Current 15 A
Maximum Operating Temperature 175 °C
Maximum Power Dissipation 50000 mW
Type NPN