BUX41 GP BJT

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  • 4131 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 200V 15A 3-Pin(2+Tab) TO-204AA

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Base Voltage 250 V
Maximum Collector Emitter Saturation Voltage 1.2@0.5A@5A 1.6@1A@8A
Maximum Collector Emitter Voltage 200 V
Maximum DC Collector Current 15 A
Maximum Emitter Base Voltage 7 V
Maximum Operating Temperature 200 °C
Maximum Power Dissipation 120000 mW
Maximum Transition Frequency 8(Min) MHz
Type NPN