BUX47 GP BJT

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  • 9 HARRIS
  • 2536 NEW JERSEY SEMICONDUCTOR
  • 10 RF POWER

Trans GP BJT NPN 400V 9A 3-Pin(2+Tab) TO-3 Sleeve

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Features Values Unit
Category Bipolar Power
Configuration Single
Maximum Collector Base Voltage 850 V
Maximum Collector Emitter Saturation Voltage 3@9A V
Maximum Collector Emitter Voltage 400 V
Maximum DC Collector Current 9 A
Maximum Power Dissipation 125000 mW
Type NPN