BUX47A GP BJT

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  • 2147 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 450V 9A 3-Pin(2+Tab) TO-3

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Features Values Unit
Category Bipolar Power
Configuration Single
Maximum Collector Emitter Saturation Voltage 1.5@1A@5A|3@2.5A@8A V
Maximum Collector Emitter Voltage 450 V
Maximum DC Collector Current 9 A
Maximum Emitter Base Voltage 7 V
Maximum Operating Temperature 150 °C
Maximum Power Dissipation 125000 mW
Type NPN