BUX48 GP BJT

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  • 12035 NEW JERSEY SEMICONDUCTOR
  • 10 WORLD WIDE

Trans GP BJT NPN 400V 15A 3-Pin(2+Tab) TO-3

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Emitter Saturation Voltage 1.5@2A@10A 5@3A@15A
Maximum Collector Emitter Voltage 400 V
Maximum DC Collector Current 15 A
Maximum Emitter Base Voltage 7 V
Maximum Operating Temperature 200 °C
Maximum Power Dissipation 175000 mW
Type NPN