BUX84 GP BJT

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  • 1053 NEW JERSEY SEMICONDUCTOR
  • 7 PHILIPS

Trans GP BJT NPN 400V 2A 3-Pin(3+Tab) TO-220AB

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Emitter Saturation Voltage 0.8@30mA@0.3A 1@200mA@1A
Maximum Collector Emitter Voltage 400 V
Maximum DC Collector Current 2 A
Maximum Operating Temperature 150 °C
Maximum Power Dissipation 40000 mW
Maximum Transition Frequency 20(Typ) MHz
Type NPN