BUX85 GP BJT
Datasheet: View
Stock
- 1133 NEW JERSEY SEMICONDUCTOR
- 83 WORLD WIDE
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Emitter Saturation Voltage | 0.8@30mA@0.3A|1@200mA@1A | V |
| Maximum Collector Emitter Voltage | 450 | V |
| Maximum DC Collector Current | 2 | A |
| Maximum Emitter Base Voltage | 5 | V |
| Maximum Operating Temperature | 150 | °C |
| Maximum Power Dissipation | 50000 | mW |
| Maximum Transition Frequency | 4(Min) | MHz |
| Type | NPN |