BUY47 GP BJT
Datasheet: View
Stock
- 155 NEW JERSEY SEMICONDUCTOR
- 4 SGS
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Base Voltage | 150 | V |
| Maximum Collector Emitter Saturation Voltage | 0.45@0.2A@2A|1@0.5A@5A | V |
| Maximum Collector Emitter Voltage | 120 | V |
| Maximum DC Collector Current | 7 | A |
| Maximum Emitter Base Voltage | 6 | V |
| Maximum Operating Temperature | 200 | °C |
| Maximum Power Dissipation | 1000 | mW |
| Maximum Transition Frequency | 90(Typ) | MHz |
| Type | NPN |