BUY49S GP BJT

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  • 1033 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 200V 3A 3-Pin TO-39 Box

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Features Values Unit
Category Bipolar Small Signal
Configuration Single
Material Si
Maximum Collector Base Voltage 250 V
Maximum Collector Emitter Saturation Voltage 0.2@50mA@500mA V
Maximum Collector Emitter Voltage 200 V
Maximum DC Collector Current 3 A
Maximum Emitter Base Voltage 6 V
Maximum Operating Temperature 200 °C
Maximum Power Dissipation 1000 mW
Maximum Transition Frequency 50(Min) MHz
Type NPN