BUY69B GP BJT

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  • 21 HARRIS
  • 1816 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 325V 10A 3-Pin(2+Tab) TO-3 Sleeve

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Features Values Unit
Category Bipolar Power
Configuration Single
Maximum Collector Base Voltage 800 V
Maximum Collector Emitter Saturation Voltage 3.3@8A V
Maximum Collector Emitter Voltage 325 V
Maximum DC Collector Current 10 A
Maximum Power Dissipation 100000 mW
Maximum Transition Frequency 10(Min) MHz
Type NPN