BUZ11A MOSFET
Datasheet: View
Stock
- 4 MOTOROLA
- 3060 NEW JERSEY SEMICONDUCTOR
- 100 RF POWER
- 3641 SGS
- 67 ST MICRO
| Features | Values | Unit |
|---|---|---|
| Category | Power MOSFET | |
| Channel Mode | Enhancement | |
| Channel Type | N | |
| Configuration | Single | |
| Material | Si | |
| Maximum Continuous Drain Current | 26 | A |
| Maximum Drain Source Voltage | 50 | V |
| Maximum Gate Source Voltage | ±20 | V |
| Maximum Operating Temperature | 175 | °C |
| Maximum Power Dissipation | 75000 | mW |
| Minimum Operating Temperature | -65 | °C |
| Number of Elements per Chip | 1 |