BUZ21 MOSFET

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  • 2563 NEW JERSEY SEMICONDUCTOR
Features Values Unit
Maximum Gate Source Voltage ±20 V
Maximum Operating Temperature 150 °C
Maximum Power Dissipation 75000 mW
Minimum Operating Temperature -55 °C
Category Power MOSFET
Channel Mode Enhancement
Channel Type N
Configuration Single
Maximum Continuous Drain Current 21 A
Maximum Drain Source Voltage 100 V
Number of Elements per Chip 1