BUZ80 MOSFET
Datasheet: View
Stock
- 2047 NEW JERSEY SEMICONDUCTOR
- 12 SGS
- 6 WORLD WIDE
| Features | Values | Unit |
|---|---|---|
| Category | Power MOSFET | |
| Channel Mode | Enhancement | |
| Channel Type | N | |
| Configuration | Single | |
| Maximum Continuous Drain Current | 3.4 | A |
| Maximum Drain Source Voltage | 800 | V |
| Maximum Gate Source Voltage | ±20 | V |
| Maximum Operating Temperature | 150 | °C |
| Maximum Power Dissipation | 100000 | mW |
| Minimum Operating Temperature | -65 | °C |
| Number of Elements per Chip | 1 |