D209L GP BJT

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  • 7841 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 400V 12A

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Base Voltage 700 V
Maximum Collector Emitter Saturation Voltage 1@1A@5A V
Maximum Collector Emitter Voltage 400 V
Maximum DC Collector Current 12 A
Maximum Emitter Base Voltage 9 V
Maximum Operating Temperature 150 ᄀC
Maximum Power Dissipation 100000 mW
Maximum Transition Frequency 5(Min) MHz
Type NPN