D33D25 GP BJT

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  • 88 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 40V 0.75A 3-Pin TO-92

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Features Values Unit
Category Bipolar Small Signal
Configuration Single
Material Si
Maximum Collector Base Voltage 50 V
Maximum Collector Emitter Saturation Voltage 0.75@50mA@500mA V
Maximum Collector Emitter Voltage 40 V
Maximum DC Collector Current 0.75 A
Maximum Emitter Base Voltage 5 V
Maximum Operating Temperature 150 °C
Maximum Power Dissipation 625 mW
Maximum Transition Frequency 135(Min) MHz
Type NPN