D40D1 GP BJT
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- 322 GENERAL ELECTRIC
- 250 MOTOROLA
- 328 NATIONAL SEMICONDUCTOR
- 2152 NEW JERSEY SEMICONDUCTOR
- 25 WORLD WIDE
Trans GP BJT NPN 30V 1A 3-Pin(3+Tab) TO-202 Box
Request For Quote| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Emitter Saturation Voltage | 0.5@50mA@500mA | V |
| Maximum Collector Emitter Voltage | 30 | V |
| Maximum DC Collector Current | 1 | A |
| Maximum Emitter Base Voltage | 5 | V |
| Maximum Operating Temperature | 150 | °C |
| Maximum Power Dissipation | 6250 | mW |
| Type | NPN |