D40D13 GP BJT
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- 19 GENERAL ELECTRIC
- 1 MOTOROLA
- 998 NEW JERSEY SEMICONDUCTOR
Trans GP BJT NPN 75V 1A 3-Pin(3+Tab) TO-202
Request For Quote| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Emitter Saturation Voltage | 1@50mA@500mA | V |
| Maximum Collector Emitter Voltage | 75 | V |
| Maximum DC Collector Current | 1 | A |
| Maximum Emitter Base Voltage | 5 | V |
| Maximum Operating Temperature | 150 | °C |
| Maximum Power Dissipation | 6250 | mW |
| Type | NPN |