D40D13 GP BJT

default part image

Datasheet: View

Stock

  • 19 GENERAL ELECTRIC
  • 1 MOTOROLA
  • 998 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 75V 1A 3-Pin(3+Tab) TO-202

Request For Quote
Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Emitter Saturation Voltage 1@50mA@500mA V
Maximum Collector Emitter Voltage 75 V
Maximum DC Collector Current 1 A
Maximum Emitter Base Voltage 5 V
Maximum Operating Temperature 150 °C
Maximum Power Dissipation 6250 mW
Type NPN