D40D8 GP BJT

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  • 460 HARRIS
  • 807 NEW JERSEY SEMICONDUCTOR
  • 4 WORLD WIDE

Trans GP BJT NPN 60V 1A 3-Pin(3+Tab) TO-202

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Emitter Saturation Voltage 1@50mA@500mA V
Maximum Collector Emitter Voltage 60 V
Maximum DC Collector Current 1 A
Maximum Emitter Base Voltage 5 V
Maximum Operating Temperature 150 °C
Maximum Power Dissipation 6250 mW
Type NPN