D40E1 GP BJT

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  • 12 HARRIS
  • 30 NATIONAL SEMICONDUCTOR
  • 362 NEW JERSEY SEMICONDUCTOR
  • 5 WORLD WIDE

Trans GP BJT NPN 30V 2A

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Features Values Unit
Category Bipolar Power
Configuration Single
Maximum Collector Emitter Saturation Voltage 1@0.1A@1A V
Maximum Collector Emitter Voltage 30 V
Maximum DC Collector Current 2 A
Maximum Emitter Base Voltage 5 V
Maximum Operating Temperature 150 ᄀC
Maximum Power Dissipation 1330 mW
Maximum Transition Frequency 230(Typ) MHz
Type NPN