D40E7 GP BJT

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  • 2 MOTOROLA
  • 835 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 80V 2A

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Features Values Unit
Category Bipolar Power
Configuration Single
Maximum Collector Emitter Saturation Voltage 1@0.1A@1A V
Maximum Collector Emitter Voltage 80 V
Maximum DC Collector Current 2 A
Maximum Emitter Base Voltage 5 V
Maximum Operating Temperature 150 ᄀC
Maximum Power Dissipation 1330 mW
Maximum Transition Frequency 230(Typ) MHz
Type NPN