D40K4 Darlington BJT
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- 1 HARRIS
- 2708 NEW JERSEY SEMICONDUCTOR
| Features | Values | Unit |
|---|---|---|
| Configuration | Single | |
| Maximum Base Emitter Saturation Voltage | 2.5@2mA@1A | V |
| Maximum Collector Emitter Voltage | 50 | V |
| Maximum Continuous DC Collector Current | 2 | A |
| Maximum Emitter Base Voltage | 13 | V |
| Maximum Operating Temperature | 150 | °C |
| Minimum DC Current Gain | 10000@200mA@5V|1000@1A@5V | |
| Minimum Operating Temperature | -65 | °C |
| Number of Elements per Chip | 1 | |
| Type | NPN | |
| Typical Current Gain Bandwidth | 75 | MHz |