D41D10 GP BJT
Datasheet: View
Stock
- 47 GENERAL ELECTRIC
- 3 MOTOROLA
- 1086 NEW JERSEY SEMICONDUCTOR
- 1 WORLD WIDE
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Emitter Saturation Voltage | 0.5@50mA@500mA | V |
| Maximum Collector Emitter Voltage | 45 | V |
| Maximum DC Collector Current | 1 | A |
| Maximum Emitter Base Voltage | 5 | V |
| Maximum Operating Temperature | 150 | °C |
| Maximum Power Dissipation | 6250 | mW |
| Type | PNP |