D44C4 GP BJT
Datasheet: View
Stock
- 63 MOTOROLA
- 42 NATIONAL SEMICONDUCTOR
- 838 NEW JERSEY SEMICONDUCTOR
- 26 RF POWER
- 68 ST MICRO
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Emitter Saturation Voltage | 0.5@100mA@1A | V |
| Maximum Collector Emitter Voltage | 45 | V |
| Maximum DC Collector Current | 6 | A |
| Maximum Emitter Base Voltage | 5 | V |
| Maximum Operating Temperature | 150 | °C |
| Maximum Power Dissipation | 30000 | mW |
| Maximum Transition Frequency | 50(Typ) | MHz |
| Type | NPN |