D44C9 GP BJT

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  • 15 GENERAL ELECTRIC
  • 840 NEW JERSEY SEMICONDUCTOR
  • 1 RF POWER
  • 2 WORLD WIDE

Trans GP BJT NPN 60V 6A 3-Pin(3+Tab) TO-220

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Emitter Saturation Voltage 0.5@50mA@1A V
Maximum Collector Emitter Voltage 60 V
Maximum DC Collector Current 6 A
Maximum Emitter Base Voltage 5 V
Maximum Operating Temperature 150 °C
Maximum Power Dissipation 30000 mW
Maximum Transition Frequency 50(Typ) MHz
Type NPN