D44H10 GP BJT
Datasheet: View
Stock
- 18 GENERAL ELECTRIC
- 1 MOTOROLA
- 5 NATIONAL SEMICONDUCTOR
- 7963 NEW JERSEY SEMICONDUCTOR
- 9 SGS
- 2 ST MICRO
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Emitter Saturation Voltage | 1@0.4A@8A | V |
| Maximum Collector Emitter Voltage | 80 | V |
| Maximum DC Collector Current | 10 | A |
| Maximum Emitter Base Voltage | 5 | V |
| Maximum Operating Temperature | 150 | °C |
| Maximum Power Dissipation | 1670 | mW |
| Maximum Transition Frequency | 50(Typ) | MHz |
| Type | NPN |