D44H4 GP BJT

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  • 155 NATIONAL SEMICONDUCTOR
  • 2796 NEW JERSEY SEMICONDUCTOR
  • 174 WORLD WIDE

Trans GP BJT NPN 45V 20A 3-Pin(3+Tab) TO-220

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Base Voltage 45 V
Maximum Collector Emitter Saturation Voltage 1@800mA@8A V
Maximum Collector Emitter Voltage 45 V
Maximum DC Collector Current 20 A
Maximum Emitter Base Voltage 5 V
Maximum Operating Temperature 150 °C
Maximum Power Dissipation 50000 mW
Maximum Transition Frequency 15(Min) MHz
Type NPN