D44H8 GP BJT
Datasheet: View
Stock
- 1818 GENERAL ELECTRIC
- 9 MOTOROLA
- 97 NATIONAL SEMICONDUCTOR
- 10992 NEW JERSEY SEMICONDUCTOR
- 11 ST MICRO
- 134 WORLD WIDE
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Base Voltage | 60 | V |
| Maximum Collector Emitter Saturation Voltage | 1@0.4A@8A | V |
| Maximum Collector Emitter Voltage | 60 | V |
| Maximum DC Collector Current | 10 | A |
| Maximum Emitter Base Voltage | 5 | V |
| Maximum Operating Temperature | 150 | °C |
| Maximum Power Dissipation | 50000 | mW |
| Type | NPN |