D45C2 GP BJT
Datasheet: View
Stock
- 88 GENERAL ELECTRIC
- 61 NATIONAL SEMICONDUCTOR
- 16660 NEW JERSEY SEMICONDUCTOR
- 4 WORLD WIDE
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Emitter Saturation Voltage | 0.5@50mA@1A | V |
| Maximum Collector Emitter Voltage | 30 | V |
| Maximum DC Collector Current | 6 | A |
| Maximum Emitter Base Voltage | 5 | V |
| Maximum Operating Temperature | 150 | °C |
| Maximum Power Dissipation | 30000 | mW |
| Maximum Transition Frequency | 40(Typ) | MHz |
| Type | PNP |