D45C7 GP BJT
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Stock
- 70 GENERAL ELECTRIC
- 467 MOTOROLA
- 17 NATIONAL SEMICONDUCTOR
- 11415 NEW JERSEY SEMICONDUCTOR
- 1 WORLD WIDE
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Emitter Saturation Voltage | 0.5@100mA@1A | V |
| Maximum Collector Emitter Voltage | 60 | V |
| Maximum DC Collector Current | 6 | A |
| Maximum Emitter Base Voltage | 5 | V |
| Maximum Operating Temperature | 150 | °C |
| Maximum Power Dissipation | 30000 | mW |
| Maximum Transition Frequency | 40(Typ) | MHz |
| Type | PNP |