D45H1 GP BJT

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  • 457 GENERAL ELECTRIC
  • 2 MOTOROLA
  • 9075 NEW JERSEY SEMICONDUCTOR
  • 100 RF POWER
  • 132 WORLD WIDE

Trans GP BJT PNP 30V 20A 3-Pin(3+Tab) TO-220

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Base Voltage 30 V
Maximum Collector Emitter Saturation Voltage 1@800mA@8A V
Maximum Collector Emitter Voltage 30 V
Maximum DC Collector Current 20 A
Maximum Emitter Base Voltage 5 V
Maximum Operating Temperature 150 °C
Maximum Power Dissipation 50000 mW
Maximum Transition Frequency 12(Min) MHz
Type PNP