D45VH1 GP BJT

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  • 6804 NEW JERSEY SEMICONDUCTOR

Trans GP BJT PNP 80V 15A 3-Pin(3+Tab) TO-220AB Rail

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Emitter Saturation Voltage 1@0.8A@8A|1.5@3A@15A V
Maximum Collector Emitter Voltage 80 V
Maximum DC Collector Current 15 A
Maximum Emitter Base Voltage 7 V
Maximum Operating Temperature 150 °C
Maximum Power Dissipation 83000 mW
Maximum Transition Frequency 50(Typ) MHz
Type PNP