D64VS3 GP BJT

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  • 882 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 300V 15A

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Features Values Unit
Category Bipolar Power
Configuration Single
Maximum Collector Emitter Saturation Voltage 0.7@1.67A@10A 1@2.5A@15A
Maximum Collector Emitter Voltage 300 V
Maximum DC Collector Current 15 A
Maximum Emitter Base Voltage 7 V
Maximum Operating Temperature 200 ᄀC
Maximum Power Dissipation 195000 mW
Maximum Transition Frequency 50 MHz
Type NPN