D64VS4 GP BJT
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- 8 GENERAL ELECTRIC
- 802 NEW JERSEY SEMICONDUCTOR
Trans GP BJT NPN 350V 15A
Request For Quote| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Maximum Collector Emitter Saturation Voltage | 0.7@1.67A@10A | 1@2.5A@15A |
| Maximum Collector Emitter Voltage | 350 | V |
| Maximum DC Collector Current | 15 | A |
| Maximum Emitter Base Voltage | 7 | V |
| Maximum Operating Temperature | 200 | ﾡC |
| Maximum Power Dissipation | 195000 | mW |
| Maximum Transition Frequency | 50 | MHz |
| Type | NPN |