GE6060 Darlington BJT
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- 100 NEW JERSEY SEMICONDUCTOR
Trans Darlington NPN 350V 20A
Request For Quote| Features | Values | Unit |
|---|---|---|
| Configuration | Single | |
| Maximum Base Emitter Saturation Voltage | 2.5@0.5A@5A | 3.5@2A@20A |
| Maximum Collector Base Voltage | 400 | V |
| Maximum Collector Emitter Voltage | 350 | V |
| Maximum Continuous DC Collector Current | 20 | A |
| Maximum Emitter Base Voltage | 5 | V |
| Maximum Operating Temperature | 150 | ﾡC |
| Minimum DC Current Gain | 40@10A@5V | 30@15A@5V |
| Minimum Operating Temperature | -65 | ﾡC |
| Number of Elements per Chip | 1 | |
| Type | NPN |